Semiconductor device and manufacturing method thereof

ABSTRACT

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. 
     An LDD region  207  provided in an n-channel TFT  302  forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions  217–220  provided in an n-channel TFT (pixel TFT)  304  forming a pixel portion greatly contribute to the decrease in the OFF current value. Here, the LDD region of the n-channel TFT of the driving circuit is formed such that the concentration of the n-type impurity element becomes higher as the distance from an adjoining drain region decreases.

This application is a Division of 10/329,405 filed Dec. 27, 2002 (U.S.Pat. No. 6,753,257) which is a Division of 09/559,185 filed Apr. 27,2000 (U.S. Pat. No. 6,534,826).

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a semiconductor device having a circuit or anelement comprising thin film transistors (hereinafter referred to as“TFTs”) on a substrate having an insulating surface, and to amanufacturing method thereof. More specifically, the present inventionrelates to electro-optical devices (called also “electronic equipments”)typified by a liquid crystal display device including a pixel section(pixel matrix circuit) and driver circuits disposed around the pixelsection and formed on the same substrate and, and electrical devices(called also “electronic appliances”) having the electro-optical devicemounted thereto. Note that, throughout this specification, thesemiconductor device indicates general devices that can function byusing semiconductor characteristics, and that electro-optical device,semiconductor circuit, and electronic equipment are all categorized assemiconductor devices.

2. Description of the Related Art

Development of a semiconductor device having a large area integratedcircuit, that comprises TFTs formed on a substrate having an insulationsurface, has been made progressively. An active matrix type liquidcrystal display device, an EL display device and a close adhesion typeimage sensor are typical of such semiconductor devices. Particularlybecause TFTs using a polycrystalline silicon film (typically, a poly-Sifilm) as an active layer (the TFT will be hereinafter referred to as“poly-silicon TFT”) have high electric field mobility, they can form avariety of functional circuits.

In the active matrix type liquid crystal display device, for example, anintegrated circuit that includes a pixel section for displaying imagesfor each functional block, a shift register circuit, a level shiftercircuit, a buffer circuit each being based on a CMOS circuit and asampling circuit, and so forth, is formed on one substrate. In the caseof the close adhesion type image sensor, a driver circuit such as asample-and-hold circuit, a shift register circuit, a multiplexercircuit, and so forth that drive the pixel section, are formed by usingthe TFTs.

These driver circuits (which are also called “peripheral drivercircuits”) do not always have the same operating condition. Therefore,the characteristics required for the TFTs are naturally different tocertain extent. The pixel section comprises a pixel TFT functioning as aswitching device and an auxiliary storage capacitor, and a voltage isapplied to a liquid crystal to drive it. Here, it is necessary to drivethe liquid crystal by alternating current, and a system called “frameinversion driving” is widely applied. Therefore, one of the requiredcharacteristics of the TFT is that an OFF current value (a drain currentvalue flowing through the TFT when it is in the OFF operation) must besufficiently lowered. In a buffer circuit on the other hand, because ahigh driving voltage is applied, the TFT must have a high withstandvoltage such that it does not undergo breakdown even when a high voltageis applied. In order to improve the current driving capacity, it isnecessary to sufficiently secure the ON current value (the drain currentvalue flowing through the TFT when it is in the ON operation).

However, the poly-silicon TFT involves the problem that its OFF currentis likely to become high. Degradation such as the drop of the ON currentvalue is observed in the poly-silicon TFT in the same way as in MOStransistors used for ICs, or the like. It is believed that the maincause is hot carrier injection, and the hot carriers generated by a highelectric field in the proximity of the drain presumably invite thisdegradation.

An LDD (lightly doped drain) structure is known as a structure of theTFT for lowering the OFF current value. This structure forms an impurityregion having a low concentration between a channel forming region and asource or drain region to which an impurity is doped in a highconcentration. The low concentration impurity region is called the “LDDregion”.

A so-called “GOLD (gate-drain overlapped LDD) structure” is also knownas a structure for preventing deterioration of the ON current value byhot carrier injection. Since the LDD region is so arranged as to overlapwith a gate wiring through a gate insulation film in this structure,this structure is effective for preventing hot carrier injection in theproximity of the drain and for improving reliability. For example,Mutsuko Hatano, Hajime Akimoto and Takeshi Sakai, “IEDM97 TechnicalDigest”, pp. 523–526, 1997, discloses a GOLD structure using side wallsformed from silicon. It has been confirmed that this structure providesby far higher reliability than the TFTs having other structures.

In a pixel section of an active matrix type liquid crystal displaydevice, a TFT is disposed for each of dozens to millions of pixels and apixel electrode is disposed for each TFT. An opposing electrode isprovided on an opposing substrate side beyond a liquid crystal, andforms a kind of capacitors using the liquid crystal as a dielectric. Thevoltage to be applied to each pixel is controlled by the switchingfunction of the TFT. As the charge to this capacitor is controlled, theliquid crystal is driven, and an image is displayed by controlling thequantity of transmitting rays of light.

However, the accumulated capacity of this capacitor decreases graduallydue to a leakage current resulting from the OFF current, or the like.Consequently, the quantity of transmitting rays of light changes,thereby lowering the contrast of image display. Therefore, it has beencustomary to dispose a capacitance wiring, and to arrange anothercapacitor (called a “storage capacitor”) in parallel with the capacitorusing the liquid crystal as the dielectric in order to supplement thecapacitance lost by the capacitor using the liquid crystal as thedielectric.

Nonetheless, the required characteristics of the pixel TFT of the pixelsection are not always the same as the required characteristics of theTFT (hereinafter called the “driving TFT”) of a driving circuit such asthe shift register circuit and the buffer circuit. For example, a largereverse bias voltage (a negative voltage in n-channel TFT) is applied tothe gate wiring in the pixel TFT, but the TFT of the driver circuit isnot fundamentally driven by the application of the reverse bias voltage.The operation speed of the former need not be as fast as that of thelatter.

The GOLD structure has a high effect for preventing the degradation ofthe ON current value, it is true, but is not free from the problem thatthe OFF current value becomes greater than the ordinary LDD structures.Therefore, the GOLD structure cannot be said as an entirely preferablestructure for the pixel TFT, in particular. On the contrary, theordinary LDD structures have a high effect for restricting the OFFcurrent value, but is not resistant to hot carrier injection, as is wellknown in the art.

For these reasons, it is not always preferred to constitute all the TFTsby the same structure in the semiconductor devices having a plurality ofintegrated circuits such as the active matrix type liquid crystaldisplay device.

SUMMARY OF THE INVENTION

The present invention is a technique for solving the above statedsubjects, and an object of the present invention is to enhance theoperation performance and the reliability of a semiconductor device byoptimizing the TFT structure disposed in a circuit or an element of thesemiconductor device, correspondent to its function. Further, thepresent invention provides a manufacturing method for materializing suchsemiconductor device.

In order to solve the above stated problems, the present invention has agoal for example in allotting an optimized structure of TFT according tothe function required by a circuit or an element formed in asemiconductor device such as a liquid crystal display device. NamelyTFTs of different structures exist on a same substrate.

In concrete, it is preferable that an element which imposes greatimportance on sufficient reduction of OFF current value (switchingelement etc.) has a TFT structure which places more importance onreduction of OFF current value than operation speed. On the other hand,a TFT structure which places greater importance on increase in operationspeed and on prevention of degradation due to hot carrier, a noticeableproblem which arises at the same time, is preferred in an element whichhas its major object in high speed operation (driver circuit elementetc.)

The present invention enables improvement of the operation performanceand the reliability of a semiconductor device by properly using theabove stated TFTs over the same substrate.

A measure is further taken in the structure of the LDD region of ann-channel TFT for preventing the degradation due to hot carrierinjection. In other words, the present invention has a characteristic indisposing a concentration gradation in the LDD region between thechannel forming region and the drain region so that the concentration ofn-type impurity element becomes gradually higher as getting closer tothe drain region. This structure calculate upon higher effect ofrelieving the electric field.

Further in case of disposing the above stated concentration gradation,the concentration of n-type impurity element included in the proximityof the boundary between a LDD region and the channel forming region ofan n-channel TFT becomes lower than the concentration included in theproximity of the boundary between the LDD region and the drain region. Ahigher effect of relieving electric field is obtained in the similarway.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A–1E illustrates manufacturing steps of a pixel portion and adriver circuit.

FIG. 2A–2D illustrates manufacturing steps of the pixel portion and thedriver circuit.

FIG. 3A–3D illustrates manufacturing steps of the pixel portion and thedriver circuit.

FIG. 4A–4B illustrates manufacturing steps of the pixel portion and thedriver circuit.

FIG. 5 is a sectional structural view of an active matrix liquid crystaldisplay device.

FIG. 6 illustrates the LDD structure of an n-channel TFT.

FIG. 7 illustrates the LDD structure of an n-channel TFT.

FIG. 8 is a perspective view of an active matrix liquid crystal displaydevice.

FIG. 9 is a circuit block diagram of an active matrix liquid crystaldisplay device.

FIG. 10 is a sectional structural view of an active matrix liquidcrystal display device.

FIG. 11 is a sectional structural view of an active matrix liquidcrystal display device.

FIG. 12A–12B illustrates the structure of a CMOS circuit.

FIG. 13A–13B illustrates the structure of a pixel portion.

FIG. 14 illustrates the structure of an EL display device.

FIG. 15A–15F illustrates examples of electronic apparatus.

FIG. 16 illustrates the result of simulation of forming an LDD region.

FIG. 17 illustrates a plasma generating mechanism of an ICP etchingsystem.

FIG. 18 illustrates an ICP etching system using multispiral coils.

FIG. 19 is a graph showing the dependence of the taper angle θ on thebias power density.

FIG. 20 is a graph showing the dependence of the taper angle θ on theflow rate ratio of CF₄.

FIG. 21 is a graph showing the dependence of the taper angle θ on the(W/resist) selection ratio.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

An embodiment mode of the present invention is described in detailaccording to the embodiments shown below.

[Embodiment 1]

An embodiment according to the present invention is described by usingFIGS. 1A to 4B. A method for fabricating at the same time, TFTs for apixel section and a driver circuit provided in its peripheral, isdescribed here. Note that a CMOS circuit which is a basic circuit for ashift register and buffer etc., and an n-channel TFT forming a samplingcircuit are shown for the driver circuit for the simplicity ofexplanation.

In FIG. 1A, it is preferable to use a glass substrate or a quartzsubstrate for substrate 100. Other than those, a silicon substrate, ametal substrate or a stainless steel substrate having an insulating filmformed on the surface thereof may be used. If heat resistivity permits,it is also possible to use a plastic substrate.

A base film 101 formed from an insulating film comprising silicon (“aninsulating film comprising silicon” generically represents a siliconoxide film, a silicon nitride film and a silicon oxynitride film in thepresent Specification) is formed by plasma CVD or sputtering to athickness of 100 to 400 nm on the surface of the substrate 100 on whichthe TFTs are to be fabricated.

Through the present Specification, silicon oxynitride film is aninsulating film represented by SiOxNy and denotes an insulating filmwhich comprises silicon, oxygen and nitrogen at a prescribed proportion.In the present Embodiment a lamination of a silicon oxynitride film of100 nm thickness which contains nitrogen at 20 to 50 atomic % (typically20 to 30 atomic %) and a silicon oxynitride film of 200 nm thicknesswhich contains nitrogen at 1 to 20 atomic % (typically 5 to 10 atomic %)is used for the base film 101. Note that the thickness need not belimited to these values. The proportion (atomic % proportion) ofnitrogen and oxygen contained in the silicon oxynitride film may be 3:1to 1:3 (typically 1:1). Further, the silicon oxynitride film may befabricated from SiH₄, N₂O and NH₃ as raw material gases.

Note that base film 101 is disposed to prevent impurity contaminationfrom the substrate, and it is not necessarily formed in case of using aquartz substrate.

A semiconductor film containing amorphous structure (amorphous siliconfilm in the present embodiment (not shown)) is formed on the base film101 at a thickness of 30 to 120 nm (preferably 50 to 70 nm) by a knownfilm deposition method. As a semiconductor film containing amorphousstructure, there are amorphous semiconductor film and microcrystallinesemiconductor film. Further, a compound semiconductor film containingamorphous structure such as amorphous silicon germanium film etc. mayalso be included. When the film was formed into the above statedthickness, the thickness of the active layer at the point of finallycompleting the TFT becomes 10 to 100 nm (preferably 30 to 50 nm).

A semiconductor film containing crystalline structure (crystallinesilicon film in embodiment 1) 102 is formed according to a techniquedisclosed in the Japanese Patent Application Laid-Open No. Hei 7-130652(corresponding to U.S. Pat. No. 5,643,826). The technique described inthe gazette is a crystallization means that uses a catalytic element forpromoting crystallization (one or plural of element selected fromnickel, cobalt, germanium, tin, lead, palladium, iron and copper;typically nickel) in crystallizing the amorphous silicon film.

More concretely, heat-treatment is conducted under the condition wherethe catalytic element(s) is held on the surface of the amorphous siliconfilm to convert the amorphous silicon film to the crystalline siliconfilm. Although Embodiment 1 uses a technique described in the Embodiment1 of the gazette, a technique described in Embodiment 2 may also beused. Though single crystal silicon film and polycrystalline siliconfilm are both included in crystalline silicon film, the crystallinesilicon film formed in the present embodiment is a silicon film havingcrystal grain boundaries. (FIG. 1A)

Though it depends on hydrogen content in the amorphous silicon film, itis preferable to carry out dehydrogenating process by heating at 400 to550° C. for some hours to reduce the contained hydrogen amount at 5 atom% or lower and conduct crystallization process. The amorphous siliconfilm may be fabricated by other deposition methods such as sputtering orvapor deposition, but it is preferable to sufficiently reduce impurityelements such as oxygen or nitrogen contained in the film.

Because the base film and the amorphous silicon film can be fabricatedby the same deposition method, they may be successively formed. Itbecomes possible to prevent contamination of the surface by not exposingto the atmosphere after formation of the base film, so that scatteringin the characteristics of the fabricated TFTs can be reduced.

Next, a light generated from a laser light source (laser light) isirradiated onto the crystalline silicon film 102 (hereinafter referredto as laser anneal) and a crystalline silicon film 103 in whichcrystallinity is improved is formed. Though a pulse oscillation type ora continuous oscillation type excimer laser light is preferable for thelaser light, a continuous oscillation type argon laser light may also beused as the laser light. The beam shape of the laser light may belinear, or it may be a rectangular shape. (FIG. 1B)

In place of laser light, a light generated from a lamp (lamp radiation)may be irradiated (hereinafter referred to as lamp annealing). As a lampradiation, lamp radiation generated from for instance halogen lamp orinfrared lamp can be used. Needless to say, they may be replaced by afurnace annealing using electric furnace (referred to as thermalannealing), and a combination of these may also be used.

In the embodiment 1, laser annealing process was carried out by formingpulse oscillation type excimer laser light into a linear shape. Thelaser annealing conditions are: XeCl gas is used as excitation gas,treatment temperature is set at room temperature, pulse oscillationfrequency is set at 30 Hz, and laser energy density at 250 to 500 mJ/cm²(typically 350 to 400 mJ/cm²).

Laser annealing process carried out at the above stated conditions hasan effect of completely crystallizing the amorphous region remainedafter heat crystallization as well as reducing defects in thecrystalline region already crystallized. Accordingly, the presentprocess may be called a process for improving crystallinity of thesemiconductor film, or a process for promoting crystallization of thesemiconductor film.

Next, a protecting film 104 is formed on crystalline silicon film 103for the later impurity doping process. Silicon oxynitride film orsilicon oxide film at a thickness of 100 to 200 nm (preferably 130 to170 nm) is used for the protecting film 104. This protecting film 104has an effect of not exposing the crystalline silicon film directly toplasma, and to enable minute concentration control at impurity doping.

Then, a resist mask 105 is formed thereon, and impurity elementimparting p-type (hereinafter referred to as p-type impurity element) isdoped through protecting film 104. As a p-type impurity element,typically an element which belongs to Group 13 of periodic table, morespecifically, boron or gallium can be used. This process (referred to aschannel doping process) is a process for controlling threshold voltageof a TFT. Here, boron is doped by ion doping in which diborane (B₂H₆) isexcited by plasma without mass separation. Needless to say, it isacceptable to use ion implantation in which mass separation isperformed.

By this process, impurity region 106 including p-type impurity (boron inthe present embodiment) at a concentration of 1×10¹⁵ to 1×10¹⁸ atoms/cm³(typically 5×10¹⁶ to 5×10¹⁷ atoms/cm³) is formed. Note that through thespecification, an impurity region containing p-type impurity region inthe above stated concentration range is defined as a p-type impurityregion (b) (provided, regions where impurity elements imparting n-typeare intentionally doped are excluded). (FIG. 1C)

Note that though the p-type impurity element is added only to theregions that become n-channel TFTs, it may be added to the entiresurface including regions that will become p-channel TFTs. Further, anelement which belongs to Group 15 may be added only to the p-channelTFTs before or after adding p-type impurity element on the entiresurface.

Next, protecting film 104 and resist mask 105 are removed, andirradiation process of laser light was conducted again. Here againexcimer laser light of pulse oscillation type or continuous oscillationtype is preferable, but argon laser light of continuous oscillation typemay also be used. The beam shape of the laser light may be either oflinear or rectangular shape. Provided, because activation of the dopedimpurity element is the object, it is preferable to irradiate with anenergy at a level of not melting the crystalline silicon film. It isalso possible to conduct laser annealing process with the protectingfilm 104 left thereon. (FIG. 1D)

In embodiment 1, laser annealing process was carried out by formingpulse oscillation type excimer laser light into a linear shape. Thelaser annealing conditions are: XeCl gas is used as excitation gas,treatment temperature is set at room temperature, pulse oscillationfrequency is set at 30 Hz, and laser energy density at 100 to 300 mJ/cm²(typically 150 to 250 mJ/cm²).

The light annealing process carried out on the above stated conditionshas an effect of recrystallizing the semiconductor film that was madeinto amorphous in impurity element doping as well as activating theimpurity element imparting n-type or p-type that was doped. It ispreferable that the above stated conditions make atomic arrangementcoordinated without melting the semiconductor film and at the same timeactivate the impurity elements.

The activation of the impurity element by this laser light may beperformed by furnace annealing, or it may be performed by combination ofthese. In case of performing activation by furnace annealing, it may beperformed at approximately 450 to 550° C. considering heat resistance ofthe substrate.

Next, unnecessary portions of the crystalline silicon film are removedto form island semiconductor layers (hereinafter referred to as activelayers) 107 to 110. (FIG. 1E)

Next, gate insulating film 111 is formed to cover the active layers 107to 110.

Gate insulating film 111 may be formed into a thickness of 10 to 200 nm,preferably into 50 to 150 nm. In the present embodiment, a siliconoxynitride film is formed into a thickness of 115 nm by plasma CVD withraw materials of N₂O and SiH₄.

Then, a conductive film 112 that will form gate electrode is formed.Note that though the conductive film 112 may be formed by a singlelayer, it is preferable to form laminated films of double layers, ortriple layers as occasion demands.

Though any conductive film may be used for the conductive film 112, itis preferable to have a film that is easily formed into a tapered shape.Typically a metal film comprising an element selected from tantalum(Ta), chromium (Cr), tungsten (W) and silicon (Si) having conductivity,or a metal compound film composed of these element as its main component(typically tantalum nitride film or tungsten nitride film), or an alloyfilm including the above stated elements (typically Mo—W alloy, Mo—Taalloy, tungsten silicide film) or a laminate film of these thin filmsmay be used. In the present embodiment a lamination of a tantalumnitride film of 50 nm thickness and a tantalum film of 350 nm thicknessis used.

The thickness of the conductive film 112 is 50–500 nm (preferably200–400 nm, and more preferably 300–350 nm). This thickness is importantsince it influences the length of tapered portions of gate electrodes.

Next, resist masks 113 a–113 e for forming gate electrodes are formed,which is illustrated in FIG. 2A.

Then, the conductive film 112 is collectively etched to form gateelectrodes 114–118 at the thickness of 400 nm. Here, the etching iscarried out such that tapered portions are formed at end portions of thegate electrodes 114–118 (FIG. 2B).

An angle θ of the tapered portions is the angle illustrated in FIG. 6.In the present invention, the etching conditions are set such that theangle θ is 3–40° (preferably 5–35°, more preferably 7–20°). The angle θgreatly influences, in a later step, the concentration gradient in LDDregions, which will be described in the following.

It is to be noted that the taper angle θ is expressed as Tan θ=HG/WG,wherein WG is the length of the tapered portions and HG is the thicknessof the tapered portions.

Then, with the resist masks 113 a–113 e used for forming the gateelectrodes 114–118 remaining, resist masks 119 a–119 c are newly formed.Then, an impurity element for n-type (hereinafter referred to as ann-type impurity element) is added to form n-type impurity regions120–122. It is to be noted that, as the n-type impurity element,typically an element which belongs to the Group 15, typically,phosphorus or arsenic can be used (FIG. 2C).

The lightly doped impurity regions 120–122 are impurity regions to,later, function as LDD regions in n-channel TFTs of a CMOS circuit andof a sampling circuit. It is to be noted that the n-type impurityelement at the concentration of 2×10¹⁶−5×10¹⁹ atoms/cm³ (typically5×10¹⁷−5×10¹⁸ atoms/cm³) is contained in the impurity regions formedhere. Such impurity regions containing an n-type impurity element in theabove-mentioned concentration range is defined herein as n-type impurityregions (b).

It is to be noted that phosphorus is added at the concentration of1×10¹⁸ atoms/cm³ by ion doping phosphine (PH₃) which is plasma excitedwithout mass separation. Of course, ion implantation with massseparation may also be used. In this process, phosphorus is added to thecrystalline silicon film through the protective film 107.

According to the present invention, the n-type impurity regions (b)120–122 are formed so as to overlap part of the gate electrodes 115 and116 through the gate insulating film 111. More specifically, byincreasing the acceleration voltage of the ion doping process (typicallyto 80–160 keV), the impurity element is added through the taperedportions of the gate electrodes.

This makes the concentration gradient of phosphorus contained inportions of the n-type impurity regions (b) 120–122 overlapping the gateelectrodes 115 and 116 reflect the change in the film thickness of thetapered portions of the gate electrodes 115 and 116. More specifically,the concentration of phosphorus added to the n-type impurity regions (b)120–122 in regions overlapping the tapered portions gradually increasesas the distance from the p-type impurity regions (b) 123 and 124increases.

This is because, depending on the film thickness of the taperedportions, the concentration of the added phosphorus in the depthdirection varies. More specifically, when attention is paid to the depthof added phosphorus of an arbitrary concentration (for example, theconcentration averaged in the depth direction), in the concentrationdistribution in the depth direction, the depth varies so as to go alongthe gradient of the tapered portions of the gate electrodes in thesection direction in the semiconductor films.

Here, the result of simulation of adding phosphorus using an electrodehaving a tapered shape is described with reference to FIG. 16. Here, asemiconductor device simulator integrated package by ISE (IntegratedSystem Engineering AG) was used.

FIG. 16 shows concentration distribution of phosphorus at an end portionof a gate electrode. Here, the calculation was made on the assumptionthat the film thickness of the gate electrode was 300 nm, the taperangle θ was 10.5°, the acceleration voltage was 110 keV, and the doseamount of phosphorus added by plasma doping (ion doping) was 1×10¹⁵ions/cm². It is to be noted that the thickness of the gate insulatingfilm, that of the semiconductor film, and that of the base film (siliconoxide film) were assumed to be 115 nm, 50 nm, and 300 nm, respectively.

As is clear from FIG. 16, in the semiconductor film (denoted by SiLayer), with regard to a region immediately under the tapered portion ofthe gate electrode, the concentration of phosphorus varies along thechannel length direction (the section direction). More specifically, agradient is shown where the concentration of phosphorus becomes higheras the distance from a channel forming region increases (as the distancefrom a drain region decreases).

Although the acceleration voltage was 110 keV here, it is expected that,if the acceleration voltage becomes higher, the concentration ofphosphorus becomes still higher inside the gate electrode. Further, itis expected that similar result will be obtained using ion implantation.

It is to be noted that, though the end portions of the n-type impurityregions (b) 120–122 are shown diagonal in FIG. 2A, this does notillustrate regions where phosphorus is added, but means that theconcentration of phosphorus in the section direction varies along theshape of the tapered portions of the gate electrodes 115 and 116.

This point is described with reference to FIG. 6. FIG. 6 is an enlargedview of the n-type impurity region (b) 120 in FIG. 2C. As shown in FIG.6, the n-type impurity region (b) 120 is formed also under a taperedportion 601. Here, the concentration of phosphorus in the taperedportion 601 increases as the distance from the p-type impurity region123 increases as shown by a curve 602.

The increasing rate depends on the ion doping conditions and the changein the film thickness of the tapered portion 601. Further, the change inthe film thickness of the tapered portion 601 depends on the taper angleθ and the film thickness of the gate electrode 115.

In this way, by tapering the end portions of the gate electrodes and byadding an impurity element through the tapered portions, impurityregions having gradually varying concentration of the impurity elementcan be formed in the semiconductor films existing under the taperedportions. In the present invention, such impurity regions areenterprisingly utilized as LDD regions.

Primarily, an LDD region is provided for alleviating sudden change inconcentration between a channel forming region and a drain region. Inthat sense, it can be said that the above-described structure is themost preferable LDD region.

In this way, the n-type impurity regions 120–122 having therein aconcentration gradient are formed. Then, the resist masks 119 a–119 c,and 113 a–113 e are removed, and the gate insulating film 111 is etchedto be removed in a self-aligning manner with the gate electrodes 114–118being as the mask. In this way, gate insulating films 125–129 whichremain under the gate electrodes 114–118 are formed (FIG. 2D).

By exposing the active layers in this manner, acceleration voltage inperforming next doping process of impurity elements can be kept low.Accordingly throughput is improved since the necessary dose amount issmall. Needless to say, the impurity regions may also be formed bythrough doping without etching the gate insulating film.

Resist masks 130 a to 130 d are next formed to cover the gate electrodesand impurity regions 131 to 139 that contain phosphorus at a highconcentration were formed by adding n-type impurity element (phosphorusin embodiment 1). Again ion doping (ion implantation is also acceptable)was conducted by utilizing phosphine (PH₃) and the phosphorusconcentration in these regions are set at 1×10²⁰ to 1×10²¹ atoms/cm³(specifically 2×10²⁰ to 5×10²¹ atoms/cm³). (FIG. 3A)

Note that in this Specification an impurity region containing n-typeimpurity element in the above stated concentration range is defined asn-type impurity region (a). Further, although phosphorus or boron, addedin the preceding processes, are already contained in the impurityregions 131 to 139, influence of phosphorus or boron added in thepreceding processes need not be considered since phosphorus is lateradded at a sufficiently high concentration. Therefore, it is acceptableto refer in this Specification, the impurity regions 131 to 139 to asn-type impurity region (a).

Resist masks 130 a to 130 d are then removed, and new resist mask 140 isformed. Then, p-type impurity element (boron in the present embodiment)is doped, and impurity regions 141 and 142 that include boron at a highconcentration are formed. Here, boron is doped at a concentration of3×10²⁰ to 3×10²¹ atoms/cm³ (typically 5×10²⁰ to 1×10²¹ atoms/cm³) by iondoping (ion implantation is also acceptable) using diborane (B₂H₆). Inthe present specification, an impurity region that includes p-typeimpurity region in the above stated concentration range is defined asp-type impurity region (a). (FIG. 3B)

Phosphorus is doped in a portion of impurity regions 141 and 142 (n-typeimpurity regions (a) 131 and 132 stated above) at a concentration of1×10²⁰ to 1×10²¹ atoms/cm³. However boron is doped at a concentrationhigher by at least 3 times here. Therefore, already formed n-typeimpurity regions are totally inverted to p-type, and function as p-typeimpurity regions. Accordingly, it is acceptable to define impurityregions 141 and 142 as p-type impurity regions (a).

After removing resist mask 140, an n-type impurity element (phosphorusin the present embodiment) is added in a self-aligned manner by usinggate electrodes 114 to 118 as masks. Thus formed impurity regions 143 to146 are adjusted so that phosphorus is added at a concentration as muchas ½ to 1/10 (typically ⅓ to 1/4) of that of the above stated n-typeimpurity region (b) (provided it is 5 to 10 times higher than the boronconcentration added in the above stated channel doping process,typically 1×10¹⁶ to 5×10¹⁸ atoms/cm³, typically 3×10¹⁷ to 3×10¹⁸atoms/cm³). Note that an impurity region containing an n-type impurityelement at the above stated concentration range is defined as n-typeimpurity region (c) in the present specification. (FIG. 3C)

Note that though phosphorus is entirely added at a concentration of1×10¹⁶ to 5×10¹⁸ atoms/cm³ except for the portions that are hidden bythe gate wiring in this process, this is not a specific problem.Further, though boron is added in the n-type impurity regions (c) 143 to146 at a concentration of 1×10¹⁵ to 1×10¹⁸ atoms/cm³ in the channeldoping process, since phosphorus is added at a concentration as much as5 to 10 times of boron contained in the p-type impurity region (b), itmay be presumed that boron does not affect the function of n-typeimpurity region (b) in this case either.

Strictly speaking however, while the phosphorus concentration of aportion that overlaps the gate electrode among the n-type impurityregions (b) 121 and 122 remains at 2×10¹⁶ to 5×10¹⁹ atoms/cm³, theportion that does not overlap the gate electrode is further added withphosphorus at a concentration of 1×10¹⁶ to 5×10¹⁸ atoms/cm³, which meansthat phosphorus is contained at a slightly higher concentration.

Next a protection film 147 comprising silicon oxynitride film isdisposed to 200 nm thickness and a heat treatment process is performedin order to activate the impurity elements of n-type or p-typeconductivity that have been doped at their respective concentrations.Furnace annealing, laser annealing or lamp annealing can be performedfor this process. The activation process is performed by furnaceannealing in embodiment 1. Heat treatment is performed in a nitrogenatmosphere at between 300 and 650° C. for 3 to 12 hours, typically from400 to 550° C. for 4 to 6 hours, here at 450° C. for 2 hours. (FIG. 3D)

The catalytic element (nickel in embodiment 1) used in crystallizationof an amorphous silicon film in embodiment 1 moved in the directionshown by the arrows and is captured in a region containing phosphorus ata high concentration (gettering) formed in the process of FIG. 3A. Thisis a phenomenon originated from gettering effect of a metal element byphosphorus. As a result, the concentration of nickel contained in laterformed channel forming regions 148 to 152 is reduced below 1×10¹⁷atoms/cm³ (preferably to 1×10¹⁶ atoms/cm³).

Conversely, the catalytic element precipitated at a high concentrationin the regions which functioned as gettering sights of the catalyticelement (regions where impurity regions 131 to 139 were formed in theprocess of FIG. 3A). The catalytic element existed in these regions at aconcentration exceeding 5×10¹⁸ atoms/cm³ (typically 1×10¹⁹ to 5×10²⁰atoms/cm³).

A hydrogenation process is next performed on the active layers byperforming heat treatment in an atmosphere containing 3 to 100% hydrogenat 300 to 550° C. for 1 to 6 hours (350° C. for 2 hours in embodiment1). This is a process to terminate dangling bonds in the semiconductorlayers by thermally activated hydrogen. Plasma hydrogenation (usinghydrogen activated by plasma) may be performed as another hydrogenationmeans.

The first interlayer insulating film 154 is next formed into 500 nm to1.5 mm. In embodiment 1 the first inter layer insulating film 154 isformed by silicon oxide film into 800 nm thickness by plasma CVD.Needless to say, a laminate structure combining insulating filmscomprising silicon such as a laminate of a silicon nitride film and asilicon oxide film may also be adopted.

Further, it is possible to use organic resin films such as polyimide,acrylic, polyamide, polyimide amide, BCB (benzocyclobutene) for thefirst interlayer insulating film 154, if the heat resistance permits.

Contact holes are then formed in order to reach the source region or thedrain region of the respective TFTs, and source wirings 155 to 158, anddrain wirings 159 to 162 are formed. Note that, although not shown inthe figures, the drain wirings 159 and 160 are electrically connected inorder to form a CMOS circuit. Note that, although not shown in thefigures, in embodiment 1 the electrodes are made with a three-layerstructure laminate film of a 100 nm titanium film, a 300 nm aluminumfilm containing silicon, and a 150 nm titanium film formed successivelyby sputtering. (FIG. 4B)

A silicon nitride film, a silicon oxide film, or a silicon oxynitridefilm is formed to a thickness of between 50 and 500 nm (typically 200 to300 nm) next as a passivation film 163. A plasma treatment using a gasthat contains hydrogen such as H₂ and NH₃ may be performed precedent toformation of the film and heat treatment may be performed after the filmformation. The preceding process provides excited hydrogen into thefirst interlayer insulating film. By performing a heat treatment to thisstate, the active layers are effectively hydrogenated because hydrogenadded into the first interlayer insulating film is diffused in the layerunderneath, as well as improving the film quality of passivation film163.

Further, after forming the passivation film 163, an additionalhydrogenation process may be performed. For example, it is good toperform heat treatment for 1 to 12 hours at between 300 and 450° C. inan atmosphere containing from 3 to 100% hydrogen. Or, a similar resultcan be obtained by using plasma hydrogenation. Note that openings may beformed here in the passivation film 163 at positions where contact holeswill be formed later in order to connect the pixel electrode and thedrain wirings.

A second interlayer insulating film 164 made from an organic resin isformed next with an approximately 1 μm thickness. Polyimide, acrylic,polyamide, polyimide amide, BCB (benzocyclobutene), etc., can be used asthe organic resin. The following points can be given as the benefits ofusing an organic resin film: easy film deposition; the parasiticcapacitance can be reduced because the specific dielectric constant islow; and superior levelness. Note that in addition to the above, otherorganic resin films, organic SiO compounds, etc. can be used. A thermalpolymerization type polyimide is used here, and after application to thesubstrate, it is baked at 300° C. to form the film.

Further, it is possible to provide a resin film colored by pigment etc.as a part of layer of the second interlayer insulating film 164 and useit as the color filter.

A silicon oxide film (not shown in the figure) is formed to 30 nmthickness over the second interlayer insulating film 164, and then ashielding film 165 is formed thereon in the region that becomes thepixel section. Further, by using the resist mask that was used at theformation of the shielding film 165, silicon oxide of an underlayer, isremoved.

The shielding film 165 is a film formed from an element chosen fromamong aluminum (Al), titanium (Ti), tantalum (Ta), chromium (Cr), andtungsten (W) or a film that has one of these elements as its principalconstituent, formed to a thickness of between 100 and 300 nm. Inembodiment 1 an aluminum film containing titanium at 1 wt % is formedinto 125 nm thick.

Note that the silicon oxide film disposed on the second interlayerinsulating film 164 can improve the adhesiveness of the shielding filmformed on top. Further, if plasma processing using CF₄ gas is performedon the surface of the second interlayer insulating film 164, which isformed by an organic resin, then the adhesiveness to the shielding filmformed on this film can be increased by surface refinement.

Further, it is possible to form other connecting wirings, not only theshielding film, by using the aluminum film containing titanium. Forexample, a connecting wiring for connecting between circuits can beformed inside the driver circuit. In this case however, beforedepositing the material that forms the shielding film or the connectingwiring, it is necessary to form contact holes in advance, in the secondinterlayer insulating film 164.

Next, an oxide substance 166 with a thickness from 20 to 100 nm(preferably between 30 and 50 nm) is formed on the surface of theshielding film 165 by publicly known anodic oxidation or plasmaoxidation. An aluminum oxide film (alumina film) is formed here as theoxide substance 166 because a film containing aluminum as its principalconstituent, is used as the shielding film 165 in embodiment 1.

Further, the structure used here has the insulating film being formedonly on the surface of the shielding film by anodic oxidation, but theinsulating film may also be formed by other gas phase method, such asplasma CVD, thermal CVD, or sputtering. In that case also, it ispreferable to make the film thickness from 20 to 100 nm (more preferablybetween 30 and 50 nm). Furthermore, a silicon oxide film, a siliconnitride film, a silicon oxynitride film, a DLC (diamond like carbon)film, or an organic resin film may also be used. Further, a combinedlaminate film of these may be used, too.

Contact holes are formed next in the second interlayer insulating film164 and in the passivation film 163 in order to reach the drain wiring162, and the pixel electrode 167 is formed. Note that pixel electrode168 is a pixel electrode of an adjoining pixel. A transparent conductivefilm may be used for the pixel electrodes 167 and 168 for the case of atransmission type liquid crystal display device, while a metallic filmmay be used for the case of reflective type liquid crystal displaydevice. An indium tin oxide (ITO) with a thickness of 110 nm is formedhere by sputtering because a transmission type liquid crystal displaydevice is used here.

Further, a storage capacitor 169 is formed at this point where the pixelelectrode 167 and the shielding film 165 overlap by interposing theoxide substance 166. In this case it is preferable to set the shieldingfilm 165 at floating state (electrically isolated state) or a constantelectric potential, more preferably at a common electric potential(median electric potential of image signals sent as data).

Thus, the active matrix substrate which comprises a driver circuit and apixel section on the same substrate, is completed. Note that in FIG. 4Ba p-channel TFT 301, and n-channel TFTs 302 and 303 are formed in thedriver circuit, and that a pixel TFT 304 is formed from an n-channel TFTin the pixel section.

Note that the process order of embodiment 1 may be properly altered.Whatever the order may be, the basic function of the active matrixsubstrate does not differ as long as the structure of finally formed TFTis one shown in FIG. 4B, and the effect of the present invention is notimpaired.

A channel forming region 201, a source region 202 and a drain region 203are each formed in the p-channel TFT 301 of the driver circuit by ap-type impurity region (a). Note that a region that contains phosphorusat a concentration of 1×10²⁰ to 1×10²¹ atoms/cm³ exists in a portion ofa source region or a drain region in effect. Further in that region thecatalytic element gettered in the process of FIG. 3D exists at aconcentration exceeding 5×10¹⁸ atoms/cm³ (typically 1×10¹⁹ to 5×10²⁰atoms/cm³).

Further, a channel forming region 204, a source region 205, and a drainregion 206 are formed in the n-channel TFT 302, and a LDD regionoverlapping with the gate wiring by interposing a gate insulating film207 is formed in one side of the channel forming region (drain regionside). Here, LDD region 207 contains phosphorus at a concentration of2×10¹⁶ to 5×10¹⁹ atoms/cm³, and is formed to completely overlap with thegate wiring.

Further, as described above, it is presumed that the LDD region 207 hasa concentration gradation of the impurity element (phosphorus in thiscase) inside by reflecting the shape of the tapered section of the gateelectrode. In other words, phosphorus concentration becomes high asgetting close to the drain region 206 neighboring to the LDD region 207(as getting further from the channel forming region 204).

A channel forming region 208, a source region 209, and a drain region210 are formed in the n-channel TFT 303. LDD regions 211 and 212 areformed in both sides of the channel forming region. Note that theregions overlapping with the gate wiring by interposing an insulatingfilm and the regions that are not overlapped with the gate wiring arerealized because a portion of the LDD regions 211 and 212 are placed soas to overlap with the gate wiring in this structure.

A cross sectional view shown in FIG. 7 is an enlarged diagram showingn-channel TFT 303 shown in FIG. 4B in the state of being manufactured tothe process of FIG. 3C. As shown here, LDD region 211 is furtherclassified into LDD region 211 a and LDD region 211 b. Phosphorus iscontained in the LDD region 211 a at a concentration of 2×10¹⁶ to 5×10¹⁹atoms/cm³, whereas it is contained at a concentration 1 to 2 times asmuch (typically 1.2 to 1.5 times) in the LDD region 211 b.

Further, channel forming regions 213 and 214, a source region 215, adrain region 216, LDD regions that do not overlap the gate electrode 217to 220, and an n-type impurity region (a) 221 contacting the regions 218and 219 are formed in the pixel TFT 304. The source region 215, and thedrain region 216 are each formed by n-type impurity region (a) at thispoint, and the LDD regions 217 to 220 are formed by impurity region (c).

The structure of TFTs that comprise a circuit or an element is optimizedin correspondence with the performance required by the pixel section andthe driver circuit, so that the operation performance and thereliability of a semiconductor device can be increased. In concrete, aTFT structure which imposes importance on high speed operation orcounter measure to hot carrier, and a TFT structure which imposesimportance on low OFF current operation can be realized over a samesubstrate by differing the disposition of LDD region and by propertyusing a LDD region that overlaps a gate electrode and a LDD region thatdoes not overlap a gate electrode in n-channel TFTs in accordance withthe required performance.

Further, in forming LDD region that overlaps the gate electrode byinterposing a gate insulating film, an enhanced effect of relievingelectric field in the LDD region is expected by forming concentrationgradation of the impurity element in the LDD region (phosphorus in thepresent embodiment).

For the case of an active matrix type liquid crystal display device, forexample, the n-channel TFT 302 is suitable for driver circuits thatplace great importance on high speed, such as a shift register circuit,a frequency divider circuit (a signal divider circuit), a level shiftercircuit, and a buffer circuit. In other words, by placing the LDD region207 in only one side (the drain region side) of the channel formingregion, this becomes a structure that reduces the resistive constituentsas much while placing great importance on hot carrier countermeasures.This is because, for the case of the above circuit group, the sourceregion and the drain region functions do not change, and the carrier(electron) movement direction is constant. However, if necessary, LDDregions can be placed in both sides of the channel forming region.

Further, the n-channel TFT 303 is suitable for a sampling circuit (alsoreferred to as a sample and hold circuit) which places emphasis on bothhot carrier countermeasures and low off current operation. In otherwords, hot carrier countermeasures can be realized by placement of theLDD regions 211 a and 212 a that overlap the gate electrode, and inaddition, low off current operation is realized by placement of the LDDregions 211 b and 212 b that do not overlap the gate electrode.Furthermore, the functions of the source region and the drain region ofa sampling circuit reverse, and the carrier movement direction changesby 180°; therefore a structure that has linear symmetry with the centerof the gate wiring must be used. Note that it is possible not to formLDD regions 211 b and 212 b, depending upon the circumstances.

Further, the n-channel TFT 304 is suitable for a pixel section or asampling circuit which place great importance on low off currentoperation. Namely, the LDD region overlapped with the gate electrode,which is a cause of an increase in the OFF current value, is notemployed, only the LDD regions not overlapping the gate electrode aredisposed, allowing low OFF current operation to be realized.Furthermore, by utilizing an LDD region with a concentration lower thanthat of the driver circuit LDD region, although the ON current valuewill fall a little, it is a thorough measure for lowering the OFFcurrent value. Additionally, it has been confirmed that an n-typeimpurity region (a) 221 is extremely effective in lowering the OFFcurrent value.

Further, the length (width) of the LDD region 207 of the n-channel TFT302 may be between 0.1 and 3.0 μm, typically from 0.2 to 1.5 μm, for achannel length of 3 to 7 μm. Further, the length (width) of the LDDregions 211 a and 212 a of the n-channel TFT 303 may be from 0.1 to 3.0μm, typically between 0.2 and 1.5 μm, and the length (width) of the LDDregions 211 b and 212 b may be from 1.0 to 3.5 μm, typically between 1.5and 2.0 μm. Moreover, the length (width) of the LDD regions 217 to 220formed in the pixel TFT 304 may be from 0.5 to 3.5 μm, typically between2.0 and 2.5μm.

Another characteristic of the present invention is that the p-channelTFT 301 is formed in self-aligned manner, and n-channel TFTs 302 to 304are formed in non self-aligned manner.

By using alumina film which has high dielectric constant of 7 to 9 forthe dielectric of the storage capacitor in this embodiment, it becamepossible to reduce the occupied area in which a required capacitor isformed. Further, by using the shielding film formed over pixel TFT asone of the electrodes for the storage capacitor as in embodiment 1, theaperture ratio in the image display section of the active matrix liquidcrystal display device can be increased.

The structure of the storage capacitor of the present invention is notnecessarily limited to the one shown in embodiment 1. For example, thestorage capacitor described in Japanese Patent Application No. Hei9-316567 or Japanese Patent Application No. Hei 10-254097 may be used.

[Embodiment 2]

A process of manufacturing an active matrix type liquid crystal displaydevice from an active matrix substrate is next explained. As shown inFIG. 5, an alignment film 401 is formed for the substrate in the stateof FIG. 4B. In the present embodiment, a polyimide film is used for thealignment film. An opposing electrode 403 comprising transparentconductive film and an alignment film 404 are formed on an opposingsubstrate 402. Color filter or a shielding film may be formed on theopposing substrate if necessary.

After forming the alignment films, a rubbing process is performed togive the liquid crystal molecules a certain fixed pre-tilt angle, sothat they are aligned. The active matrix substrate, on which a pixelsection and driver circuits are formed, and the opposing substrate arestuck together through a sealing material, spacers, or a resin filmprovided by patterning (not shown in the figures) in accordance with aknown cell assembly process. A liquid crystal material 405 is nextinjected between both substrates, and the cell is completely sealed by asealant (not shown in the figures). A known liquid crystal material maybe used as the liquid crystal material. Thus the active matrix typeliquid crystal display device shown in FIG. 5 is completed.

The structure of the active matrix liquid crystal display device is nextdescribed by referring to the perspective view of FIG. 8. In order tocorrespond FIG. 8 to cross sectional view of FIGS. 1A to 4B, commonreference numerals are used. The active matrix substrate comprises apixel section 701, scanning (gate) signal driver circuit 702, image(source) signal driver circuit 703 formed over a glass substrate 100. Apixel TFT 304 of the pixel section is an n-channel TFT, and drivercircuits disposed to surround the pixel circuit are basically formedfrom CMOS circuits. Scanning signal driver circuit 702 and image signaldriver circuit 703 are respectively connected to the pixel section 701through gate wiring 704 and source wiring 158. An input-output signalwiring 707 is disposed from external input-output terminal 706 which isconnected to FPC 705, to the input-output terminal of the drivercircuit.

[Embodiment 3]

FIG. 9 shows an example of circuit structure of the active matrixsubstrate shown in embodiment 2. The active matrix substrate ofembodiment 3 has a image signal driver circuit 801, a scanning signaldriver circuit (A) 807, a scanning signal driver circuit (B) 811, apre-charge circuit 812, and a pixel section 806. Through theSpecification, driver circuit is a generic name including image signaldriver circuit 801 and a scanning signal driver circuit 807.

The image signal driver circuit 801 is provided with a shift registercircuit 802, a level shifter circuit 803, a buffer circuit 804, and asampling circuit 805. Further, the scanning signal driver circuit (A)807 is provided with a shift register circuit 808, a level shiftercircuit 809, and a buffer circuit 810. The scanning signal drivercircuit (B) 811 has a similar structure.

The driver voltages for the shift register circuits 802 and 808 isbetween 5 and 16 V here (typically 10 V), and the structure shown byreference numeral 302 in FIG. 4B is suitable for n-channel TFTs used inthe CMOS circuits forming the circuits.

Furthermore, the driver voltage becomes high at between 14 and 16 V forthe level shifter circuits 803 and 809, and the buffer circuits 804 and810, but similar to the shift register circuits, CMOS circuitscontaining the n-channel TFT 302 shown in FIG. 4B are suitable. Notethat using a multi-gate structure, such as a double gate structure and atriple gate structure for the gate wiring is effective in increasingreliability in each circuit.

Further, the sampling circuit 805 has a driver voltage of between 14 and16 V, but the source region and the drain region are inverted and it isnecessary to reduce the off current value, so CMOS circuits containingthe n-channel TFT 303 of FIG. 4B are suitable. Note that only then-channel TFT is shown in FIG. 4B, but in practice the n-channel TFT anda p-channel TFT are combined when forming the sampling circuit.

Further, the pixel section 806 has a driver voltage of between 14 and 16V, but it is necessary to reduce the off current value even lower thanthat of the sampling circuit 805. Therefore it is preferable to usen-channel TFT 304 of FIG. 4B for the pixel TFT.

Note that the structure of embodiment 3 can be easily realized bymanufacturing a TFT according to manufacturing method shown inembodiment 1. Though the embodiment 3 shows only the structures of pixelsection and driver circuit, it is possible to form a frequency dividercircuit (signal divider circuit), D/A converter circuit, operationalamplifier circuit, g compensation circuit, and further signal processingcircuits (they may also be referred to as logic circuits) such-as amemory and a micro processor over a same substrate by following themanufacturing method of embodiment 1.

As stated above, the present invention enables to materialize asemiconductor device comprising a pixel section and a driver circuit fordriving the pixel section over a substrate, such as a semiconductordevice having a signal processing circuit, a driver circuit and a pixelcircuit over a same substrate.

[Embodiment 4]

In the present embodiment, an active matrix liquid crystal displaydevice having a pixel portion structured differently from that ofEmbodiment 2 is described with reference to FIG. 10. Since its basicstructure is similar to the structure illustrated in FIG. 5, onlydifferent portions are described.

The structure illustrated in FIG. 10 is different from that ofEmbodiment 2 in the structure of a pixel TFT (n-channel TFT) 305 formingthe pixel portion. More specifically, in the present embodiment, thestructure illustrated in FIG. 10 is different in that offset regions57–60 are formed between channel forming regions 51 and 52 and LDDregions 53–56 made of n-type impurity regions (c), respectively.

It is to be noted that an offset region means, as 57–60, a semiconductorregion the composition of which is the same as that of a channel formingregion (the impurity element contained in the region is the same as thatcontained in the channel forming region) and which does not overlap agate electrode through a gate insulating film. The offset regions 57–60function as mere resistance regions and are highly effective indecreasing the OFF current value.

In order to materialize such a structure, for example, in the processillustrated in FIG. 3C in Embodiment 1, before adding the n-typeimpurity element, an insulating film 61 comprising silicon is formed atthe thickness of 20–200 nm (preferably 25–150 nm) so as to cover thegate wiring and the like.

It is to be noted that the structure of the present embodiment can bematerialized by modifying part of the processes described in Embodiment1, and can be freely combined with both structures described inEmbodiments 2 and 3.

[Embodiment 5]

In the present embodiment, an active matrix liquid crystal displaydevice structured differently from that of Embodiment 2 is described.FIG. 11 is a sectional structural view of an active matrix liquidcrystal display device of the present embodiment. Since its TFTstructure forming the driver circuit and the pixel portion is basicallysimilar to the structure described in Embodiment 1, only differentportions are described. The description is made referring to thereference numerals used in FIGS. 1A–5 as the need arises.

The active matrix liquid crystal display device illustrated in FIG. 11is characteristic in that, in the driver circuit, gate electrodes 65 and66 and a gate wiring 67 are formed of different materials. Morespecifically, in the present embodiment, the gate electrodes 65 and 66are formed of a laminated film formed by laminating a tantalum nitridefilm and a tantalum film, while the gate wiring 67 is formed of analuminum film (including an aluminum alloy film).

Here, a sectional view shown by A–A′ in FIG. 11 is a sectional viewtaken along the line A–A′ in a plan view of FIG. 12A. FIG. 12B is asectional view taken along the line B–B′ of FIG. 12A.

In the present embodiment, as shown in FIG. 12A, the gate electrodes 65and 66 are not required to have very low resistivity, and thus, amaterial which can be tapered as easily as possible may be selected.This is the reason that the laminated film formed by laminating thetantalum nitride film and the tantalum film is used in the presentembodiment. On the other hand, since the gate wiring 67 is required totransmit signals over a long distance, and thus, it is preferable thatthe gate wiring 67 is formed of a material having the lowest possibleresistivity. This is the reason that the aluminum film is used in thepresent embodiment.

It is to be noted that, as illustrated in FIGS. 12A and 12B, endportions of the gate electrodes 65 and 66 are directly connected withthe gate wiring 67. Here, since the electrical connection is madedirectly without an interlayer insulating film, processes for formingsuch an interlayer insulating film, providing contact holes, and thelike can be eliminated, which is, of course, on the assumption that noinsulating film is formed on the gate electrodes 65 and 66.

The same can be said with regard to the structure of the pixel portion.Gate electrodes 68 and 69 and a gate wiring 70 are formed of differentmaterials. More specifically, the gate electrodes 68 and 69 are formedof a laminated film formed by laminating a tantalum nitride film and atantalum film, while the gate wiring 70 is formed of an aluminum film(including an aluminum alloy film).

Here, a sectional view shown by C–C′ in FIG. 11 is a sectional viewtaken along the line C–C′ in a plan view of FIG. 13A. FIG. 13B is asectional view taken along the line D–D′ of FIG. 13A. In this case also,as illustrated in FIGS. 13A and 13B, end portions of the gate electrodes68 and 69 can be directly connected with the gate wiring 70.

Further, in the present embodiment, a storage capacitance 305 which isdifferently structured from that in Embodiment 1 is formed in the pixelportion. An electrode (hereinafter referred to as a capacitanceelectrode) 73 for forming the storage capacitance is formed on asemiconductor region 71 electrically connected with a drain region 216through an insulating film (hereinafter referred to as a capacitanceinsulating film) 72 formed simultaneously with the gate insulating filmfor forming the storage capacitance. Further, a capacitance wiring 74electrically connected with the capacitance electrode 73 is formed onthe capacitance electrode 73. Reference numerals 75 and 76 denote asource wiring and a drain wiring, respectively.

Further, in the present embodiment, a shielding film 77 is provided noton the side of the active matrix substrate but on the side of theopposing substrate.

The above-described structure can be materialized by modifying themanufacturing processes of Embodiment 1. After the process illustratedin FIG. 3C is completed, the activation process is carried out withoutforming the protective film 152 on the same conditions as those ofEmbodiment 1.

However, in order to materialize the structure of the presentembodiment, it is necessary to pay full attention to the oxygenconcentration in the atmosphere used in this heat treatment process. Inthe present embodiment, since the heat treatment is carried out with thetantalum film as the material for forming the gate electrodes beingexposed, if the surface of the gate electrodes is oxidized, not only thesurface is covered with an insulating film but also the resistivitygreatly increases. As described later, if the surface is covered with aninsulating film, connection with a gate wiring in a later process isdifficult. Accordingly, in the present embodiment, the concentration ofoxygen contained in the nitrogen atmosphere is made to be 1 ppm or less(preferably 0.1 ppm or less), and the substrate is carried into and outof the electric heating furnace preferably after the furnace temperaturebecomes 150° C. or lower.

The surface of the gate electrodes is thought to be nitrated to form anitride by carrying out the activation process (in the presentembodiment, the furnace annealing process) on the above-describedconditions. However, since an insulating film is not formed, conductivesurface is exposed.

After the activation process is completed, the gate wirings 67 and 70formed of an aluminum film are formed. It is to be noted that, here, inaddition to the gate wirings 67 and 70, an input/output signal wiring(not shown) for transmitting a signal from the external to the drivercircuit may be formed. An input/output signal wiring as used hereingenerically refers to an input signal wiring or an output signal wiringfor transmitting to a semiconductor circuit various kinds of signalssuch as a control signal (a start pulse signal, a clock signal, and thelike) and a signal including image information transmitted to a drivercircuit of a semiconductor device from an external input/output terminalsuch as an FPC (flexible print circuit).

In the present embodiment, by using a conductive film formed ofaluminum, copper, or silver (including alloys thereof) as the materialfor forming the input/output signal wiring (wiring denoted as 707 inFIG. 8) and the gate wirings 67 and 68, wirings the resistivity of whichis as low as 0.1–10 μΩcm are materialized. Though aluminum has problems,for example, that hillocks are liable to be formed when it is heated,since, in the present embodiment, the wirings are formed after all heattreatment processes which may cause hillocks in the aluminum film arecarried out, there is no problem caused.

It is to be noted that the above-described wirings having lowresistivity are often used in particular portions such as theinput/output signal wiring and part of the gate wirings. In particular,since it is difficult to minutely process an aluminum film to have theline width of 2 μm or less, aluminum is not appropriate as the materialof the gate electrodes which require minute processing and of wiringsfor connection in the driver circuit which require high densityintegration. Since the resistance of the gate wirings and of shortwirings for connecting TFTs with each other in the driver circuit is nota matter of importance, a tantalum film or the like is enough as theirmaterial.

It is to be noted that the structure of the present embodiment can befreely combined with any structure described in Embodiments 2–4.

[Embodiment 6]

In the structure described in Embodiment 5, any low resistance materialmay be used as the gate wirings. More specifically, other than thealuminum film described in Embodiment 5, a film made of copper or themain component of which is copper, a film made of silver or the maincomponent of which is silver, or a laminated film of a combinationthereof may be used.

Further, a film formed of a material such as titanium, titanium nitride,tantalum, tantalum nitride, tungsten, tungsten nitride, molybdenum,niobium may be laminated to the above-described thin film made ofaluminum, copper, or silver. The order of the lamination does notmatter, and the gate Wiring may be a triple laminated structure wherethe low resistance material is sandwiched. These films are particularlyeffective when the aluminum film is used as the gate wirings, and canprevent hillocks from being formed.

In addition, the above-described thin film made of aluminum, copper, orsilver is very liable to be oxidized, and thus, very liable to causemalinsulation. Therefore, by laminating the thin film made of titaniumor the like on the upper surface of the gate wirings, electrical contactwith other wirings can be easily secured.

It is to be noted that the structure of the present embodiment can befreely combined with any structure described in Embodiments 2–5.

[Embodiment 7]

While, in Embodiment 1, a case where the semiconductor film containingcrystal structure is formed using a catalytic element for facilitatingthe crystallization is described, in the present embodiment, a casewhere a semiconductor film containing crystal structure is formed usingthermal crystallization or laser crystallization and without using sucha catalytic element is described.

In case of thermal crystallization, after a semiconductor filmcontaining amorphous structure is formed, a heat treatment process iscarried out at 600–650° C. for 15–24 hours. By carried out the heattreatment at 600° C. or above, natural nuclei are generated and thecrystallization progresses.

In case of laser crystallization, after a semiconductor film containingamorphous structure is formed, a laser annealing process is carried outon the first annealing condition described in Embodiment 1. This makesit possible to form a semiconductor film containing crystal structure ina short time. Of course, lamp annealing can be carried out instead oflaser annealing.

As described in the above, the semiconductor film containing crystalstructure used in the present invention can be formed using any knownmeans. It is to be noted that the present embodiment can be freelycombined with any structure described in Embodiments 1–6.

[Embodiment 8]

A case of forming an active matrix substrate from a differentmanufacturing process from that of embodiment 1 is described inembodiment 8.

In embodiment 1, a technique in which crystallization process isperformed by using the technique disclosed in Japanese PatentApplication Laid-Open Hei 7-130652 and then gettering the catalystelement used in the crystallization into source and drain regions at thesame time with activation of source and drain regions, was used.

However it is also possible to use the technique disclosed in JapanesePatent Application Laid-Open Hei 10-270363 for the processes ofcrystallization through gettering. In the case of using the technologydisclosed in this gazette, after performing crystallization processusing catalyst element, a region containing an element belonging toperiodic table Group 15 (typically phosphorus) is selectively formed andthe catalyst element is gettered into the region.

Further as another method, it is possible to use the technique disclosedin Japanese Patent Application Laid-Open No. Hei 10-247735 for theprocesses from crystallization process through gettering process.

As described above, the semiconductor film including crystallizationstructure used in the present invention may be formed from variousmethods from public domain. Note that the structure of embodiment 8 canbe freely combined with the structures of embodiments 1 to 7.

[Embodiment 9]

It is possible to use the present invention when forming an interlayerinsulating film on a conventional MOSFET, and then forming TFTs on that.In other words, it is possible to realize a semiconductor device with athree dimensional structure. Further, it is possible to use an SOIsubstrate such as SIMOX, Smart-Cut (a trademark of SOITEC corporation),or ELTRAN (a trademark of Cannon, Inc.).

Note that it is possible to freely combine the structure of embodiment 9with the structure of any of embodiments 1 to 8.

[Embodiment 10]

The structure of the present invention may also be applied to an ELdisplay device. In the present embodiment, a case where the presentinvention is implemented in a pixel portion of an EL display device (inparticular, an active matrix EL display) is described with reference toFIG. 14.

Here, two TFTs 91 and 92 are formed in a pixel. The TFT 91 functions asa switching element (hereinafter referred to as a TFT for switching),and the TFT 92 is a TFT for controlling the amount of electric currentto an EL element (hereinafter referred to as a TFT for currentcontrolling). The TFT 91 is an n-channel TFT while the TFT 92 is ap-channel TFT. Though the TFT for current controlling is a p-channel TFThere, an n-channel TFT may also be used.

The TFT 191 for switching is formed over a substrate 11, on which a basefilm 12 is formed, so as to have an active layer including a sourceregion 13, a drain region 14, LDD regions 15 a–15 d, a heavily dopedimpurity region 16, and channel forming regions 17 a and 17 b, a gateinsulating film 18, gate electrodes 19 a and 19 b, a first interlayerinsulating film 20, a source wiring 21, and a drain wiring 22. It is tobe noted that the gate electrodes 19 a and 19 b are electricallyconnected with each other to form a double-gate structure.

The TFT 91 for switching is connected with a storage capacitance 93. Thestorage capacitance 93 is formed of a semiconductor region 23 forcapacitance forming which is electrically connected with the drainregion 14, a gate insulating film 18 (which functions as a dielectricfor capacitance forming in the region where the storage capacitance 93is formed), and an electrode 24 for capacitance forming. It is to benoted that a connection wiring 25 is a wiring for giving fixed potential(here, the ground potential) to the electrode 24 for capacitanceforming, and is simultaneously formed with the source wiring 21 and thedrain wiring 22.

Here, in the TFT 91 for switching, the LDD regions 15 a–15 d areprovided so as not to overlap the gate electrodes 19 a and 19 b throughthe gate insulating film 18. When selected, the TFT 91 for switchingstores charge corresponding to a video signal (a signal including imageinformation) in the storage capacitance 93. When unselected, the TFT 91for switching has to retain the charge at all times. Therefore, chargeleakage due to the OFF current value is required to be made as small aspossible. In this sense, the most important task in designing the TFT 91for switching is to decrease the OFF current value.

Next, the TFT 92 for current controlling is formed so as to have anactive layer including a source-region 26, a drain region 27, and achannel forming region 29, a gate insulating film 18, a gate electrode30, a first interlayer insulating film 20, a source wiring 31, and adrain wiring 32. It is to be noted that, though the gate electrode 30forms a single-gate structure, it may form a double-gate structure.

The gate electrode 30 is electrically connected with the drain region 14of the TFT 91 for switching through the drain wiring (which can also becalled a connection wiring) 22. The source wiring 31 is integral withthe connection wiring 25 to be connected with a common power supplyline.

The TFT 92 for current controlling not only supplies electric currentfor making the EL element 94 emit light but also controls the amount ofthe supplied electric current to make gradation display possible.

As described in the above, the two TFTs structured differently accordingto their respective functions are disposed in a pixel. It is to be notedthat, in the present embodiment, the TFT 91 for switching is ann-channel TFT while the TFT 92 for current controlling is a p-channelTFT. Though the TFT for current controlling is a p-channel TFT here, itmay be formed of an n-channel TFT.

A passivation film 33 is a silicon nitride film or a silicon oxynitridefilm. A color filter 34 and a phosphor 35 (also referred to as aluminescent pigment layer) are the same color which is red (R), green(G), or blue (B), and include pigment of that color. The color filter 34is provided for improving the color purity, and the phosphor 35 isprovided for carrying out color conversion.

It is to be noted that color display methods of EL display devices areroughly divided into four: a method where three kinds of EL elementscorresponding to RGB are formed; a method where EL elements which emitwhite light and color filters are combined; a method where EL elementswhich emit blue light and phosphors (luminescent color conversionmeasure: CCM) are combined; and a method where a transparent electrodeused as the cathode (opposing electrode) and EL elements correspondingto RGB are combined.

The present embodiment is an example of the method where EL elementswhich emit blue light and phosphors are combined. Here, light havingwavelength of the blue range including ultraviolet light is generatedusing a light emitting layer which emits blue light as the EL element94, and the phosphor 35 is excited by that light to generate red, green,or blue light. The light is, after it passes through the color filter 34to improve the color purity, outputted.

It is to be noted that the present embodiment can be implementedindependent of the light emitting method, and all the four methodsdescribed in the above can be used in the present embodiment.

After the color filter 34 and the phosphor 35 are formed, a secondinterlayer insulating film 36 is formed to carry out flattening. As thesecond interlayer insulating film 36, an organic resin film made of, forexample, polyimide, acryl resin, BCB (benzocyclobutene) is preferable,but of course, an inorganic resin film may also be used if enoughflattening can be carried out.

A pixel electrode (an anode of the EL element) 37 made of a transparentconductive film is formed after a contact hole is formed in the secondinterlayer insulating film 36 and the passivation film 33 so as to beconnected with the drain wiring 32 of the TFT 92 for currentcontrolling.

An EL layer 38 (preferably made of an organic material), a cathode 39,and a protective electrode 40 are formed in this order on the pixelelectrode 37. The EL layer 38 may have a single layer structure or alaminated structure, but often has a laminated structure. Various suchlaminated structures combining an electron transmitting layer, apositive hole transmitting layer, and the like with the light emittinglayer have been proposed, and the present invention may have any suchstructures.

As the cathode 39, a material containing magnesium (Mg), lithium (Li),or calcium (Ca) having a small work function is used, and preferably, anMgAg electrode is used. The protective electrode 40 is an electrodeprovided for the purpose of protecting the cathode 39 against externalmoisture, and is formed of a material containing aluminum (Al) or silver(Ag).

It is to be noted that the EL layer 38 and the cathode 39 are preferablycontinuously formed without being exposed to the atmosphere. Morespecifically, no matter what kind of laminated structure the EL layerand the cathode may have, preferably, all of them are continuouslyformed. This is because, when an organic material is used as the ELlayer, since such a material is easily affected by moisture, it isnecessary to prevent the material from absorbing moisture due to itsexposure to the atmosphere. Further, it is more preferable tocontinuously form not only the EL layer 38 and the cathode 39 but alsothe protective electrode 40.

The EL display device of the present embodiment has a pixel portionformed of pixels structured as described in the above, and TFTsstructured differently according to their respective functions aredisposed in a pixel. This makes it possible to form a TFT for switchingwhich has a sufficiently low OFF current value and a TFT for currentcontrolling which is not affected by hot carrier injection in the samepixel, and thus, an EL display device having high reliability andcapable of displaying sufficient images can be formed.

The same thing can be said with regard to an active matrix EL displaydevice where a driver circuit portion and a pixel portion are formed onthe same substrate. In other words, the gist of the present invention isthat TFTs structured differently according to their respective functionsrequired by the circuit or the element are disposed both in the drivercircuit portion and in the pixel portion.

It is to be noted that the EL display device of the present embodimentcan be freely combined with any structure described in Embodiments 1 and3–8.

[Embodiment 11]

It is possible to use a variety of liquid crystal materials in a liquidcrystal display device manufactured in accordance with the presentinvention. The following can be given as examples of such materials: aTN liquid crystal; PDLC (polymer diffusion type liquid crystal); an FLC(ferro electric liquid crystal); an AFLC (antiferroelectric liquidcrystal); and a mixture of an FLC and an AFLC.

For example, the liquid crystal materials disclosed in: Furue, H, etal., “Characteristics and Driving Scheme of Polymer-stabilizedMonostable FLCD Exhibiting Fast Response Time and High Contrast Ratiowith Gray-scale Capability,” SID, 1998; in Yoshida, T., et al., “AFull-color Thresholdless Antiferroelectric LCD Exhibiting Wide ViewingAngle with Fast Response Time,” SID 97 Digest, 841, 1997; S. Inui etal., “Thresholdless antiferroelectricity in liquid crystals and itsapplication to displays, 671–673, J. Mater. Chem. 6(4), 1996; and inU.S. Pat. No. 5,594,569 can be used.

In particular, among an antiferroelectric liquid crystal material withno threshold value (thresholdless antiferroelectric LCD: abbreviatedTL-AFLC) that shows electro-optical response characteristic in whichtransmittivity is continuously varied against electric field, is used,there are some that show V-shaped (or U-shaped) electro-optical responsecharacteristic, and even liquid crystals whose operating voltage isapproximately ±2.5 V are found. Accordingly there are some cases wherepower supply voltage for the pixel section is on the order of 5 to 8 Vand that indicates a possibility of driving the driver circuit and thepixel circuit with the same power supply voltage. Namely, the entireliquid crystal display device can be made low power consumption.

Further, ferro electric liquid crystals and anti-ferro electric liquidcrystals possess an advantage in that they have a high response timecompared to TN liquid crystals. Since TFTs used in the present inventioncan achieve TFTs whose operation speed is very fast, it is possible torealize a liquid crystal display device having fast image response speedin which fast response speed of ferroeletric liquid crystal andantiferroelectric liquid crystal is sufficiently utilized.

Further, thresholdless antiferroelectric mixed liquid crystal has largespontaneous polarization in general, and the dielectric constant ofliquid crystal itself is large. Therefore, comparatively large storagecapacitor is required in the pixel in case of using thresholdlessantiferroelectric mixed liquid crystal for a liquid crystal displaydevice. It is preferable to use thresholdless antiferroelectric mixedliquid crystal having small spontaneous polarity. From this point ofview, the storage capacitor shown in FIG. 4B of embodiment 1 ispreferable because it can store a large capacitance in a small area.

It is needless to say that the use of liquid crystal display device ofembodiment 11 for display of electronic devices such as personalcomputer etc. is effective.

The structure of the present invention can be freely combined with anystructure of embodiment 1 to 9.

[Embodiment 12]

CMOS circuits and pixel section formed in accordance with the presentinvention can be used in various electro-optical devices (active matrixliquid crystal display device, active matrix EL display device andactive matrix EC display device). Namely the present invention can beoperated in all of the electronic machines (electronic device orelectronic products) incorporating these electro-optical devices as adisplay.

The following can be given as examples of this type of electronicmachines: liquid crystal displays; video cameras; digital still cameras;projectors (front type or rear type); goggle type displays (head mounteddisplays); car navigation systems; personal computers; portableinformation terminals (such as mobile computers, portable telephones orelectronic book etc.); image reproduction devices having recording media(in concrete devices incorporating display which is capable of showingthe image reproduced from recording medium such as compact disc (CD),laser disc (LD) or digital video disc (DVD)); etc. Some examples ofthese are shown in FIGS. 15A to 15F.

FIG. 15A is a personal computer, and comprises a main body 2001, animage receiving section 2002, a display device 2003, and a keyboard 2004etc. The present invention can be applied to the display device 2003.

FIG. 15B is a video camera, and comprises a main body 2101, a displaydevice 2102, a voice input section 2103, operation switches 2104, abattery 2105, and an image receiving section 2106. The present inventioncan be applied to the display device 2102.

FIG. 15C is a goggle type display, and comprises a main body 2201,display device 2202, and arm sections 2203 etc. The present inventioncan be applied to the display device 2202.

FIG. 15D is an image reproduction device (in concrete DVD reproductiondevice), and comprises: a main body 2301; a recording medium (CD, LD orDVD etc.) 2302; operation switches 2303; display device (a) 2304; anddisplay device (b) 2305 etc. The display device (a) mainly displaysimage information and display device (b) mainly displays literalinformation, and the present invention can be used in these displaydevices (a) and (b). Note that the present invention can be used in CDreproduction devices, game machines as the image reproduction devicesincorporating recording medium.

FIG. 15E is a front type projector, and comprises: a main body 2401 andan optical engine 2402 comprising a light source, optical lens anddisplay device, etc, and it can display the image onto the screen 2403.The present invention can be used in the display device (not shown)incorporated in the optical engine 2402. Note that the display devicemay apply a system which used three plates or a system which uses asingle plate, and further, it may be a transmissive type display deviceor a reflective type display device.

FIG. 15F is a rear type projector and comprises: a main body 2501; anoptical engine 2402 comprising a light source, optical lens and displaydevice, etc; reflectors 2503 and 2504; and screen 2505 etc. The presentinvention can be used in the display device (not shown) incorporated inthe optical engine 2402. Note that the display device may apply a systemwhich used three plates or a system which uses a single plate, andfurther, it may be a transmissive type display device or a reflectivetype display device.

As shown above, the applicable range of the present invention is verylarge, an it is possible to apply to electric machines of various area.Further, the electric machine of embodiment 12 can be realized byutilizing structures of any combination of embodiments 1 to 11.

[Embodiment 13]

In the present embodiment, an example of a method of forming electrodesand wirings illustrated in Embodiment 1, that is, a gate electrodehaving a tapered shape in section and a gate electrode, is described.

First, a gate insulating film made of silicon oxynitride is formed, anda metal laminated film is formed on the gate insulating film bysputtering. In the present embodiment, a tungsten target having thepurity of 6N or more is used. As the sputtering gas, argon (Ar), krypton(Kr), xenon (Xe) or the like as a gas made of one chemical element or amixture gas thereof is used. The film forming conditions such as thesputtering power, the gas pressure, and the substrate temperature areappropriately controlled by an operator. It is to be noted that theabove-described metal laminated film has a tungsten nitride filmexpressed as WNx (0<×<1) as its lower portion and a tungsten film as itsupper portion.

The metal laminated film obtained in this way contains almost noimpurity element, and in particular, the oxygen content is 30 ppm orless. The electric resistivity can be made to be 20 μΩcm or less,typically 6–15 μΩcm. The stress of the film can be made to be from−5×10⁹ to 5×10⁹ dyn/cm².

Next, a resist mask pattern (film thickness: 1.5 μm) for obtaining adesired gate wiring pattern is formed.

Then, in the present embodiment, an ICP (inductively coupled plasma)etching system using highly density plasma is used in etching andpatterning the metal laminated film to form the gate electrode having atapered shape in section and the gate electrode are formed.

Here, the plasma generating mechanism of the ICP dry etching system isdescribed in detail with reference to FIG. 17.

FIG. 17 is a schematic structural view of an etching chamber. An antennacoil 2 disposed on a quartz plate 1 at the top of the chamber isconnected with an RF power source 4 through a matching box 3. Anopposingly disposed lower electrode 5 on the substrate side is connectedwith an RF power source 7 through a matching box 6.

When RF current is applied to the antenna coil 2 above the substrate, RFcurrent J passes through the antenna coil 2 in directions denoted as α,and magnetic field B is generated in directions denoted as Z.μ₀J=rot B

According to Faraday's law of electromagnetic induction, an inductionfield E is generated in the directions denoted as α.−∂B/∂t=rot E

In the induction field E, electrons are accelerated in the directionsdenoted as α and collide against the gas molecules to generate plasma.Since the directions of the induction field is α, the probability thatcharged particles collide against walls of the etching chamber or thesubstrate to lose the charge is low. Accordingly, highly density plasmacan be generated with pressure as low as about 1 Pa. Since there isalmost no downstream magnetic field B, the region of the highly densityplasma extends like a sheet.

By adjusting the RF power to be applied to the antenna coil 2 (to whichthe ICP power is applied) and to the lower electrode 5 on the substrateside (to which the bias power is applied), respectively, the plasmadensity and the self bias voltage can be independently controlled.Further, the frequency of the applied RF power can be varied accordingto the film to be etched.

In order to obtain highly density plasma in an ICP etching system, it isnecessary to pass the RF current J through the antenna coil 2 with smallloss. In order to make larger the area of the display device, it isnecessary to lower the inductance of the antenna coil 2. For the purposeof attaining these, an ICP etching system with the antenna divided, thatis, with multispiral coils 82, as illustrated in FIG. 18, has beendeveloped. A reference numeral 81 denotes a quartz plate. Referencenumerals 83 and 86 denote matching boxes, and reference numerals 84 and87 denote RF power sources. A lower electrode 85 for retaining asubstrate 88 is provided at the bottom of the chamber through aninsulator 89.

In the present embodiment, by using the ICP etching system usingmultispiral coils among various ICP etching systems, wirings having thedesired taper angle θ are formed.

In order to obtain the desired taper angle θ, in the present embodiment,the bias power density of the ICP etching system is adjusted. FIG. 19 isa graph showing the dependence of the taper angle θ on the bias powerdensity. As shown in FIG. 19, the taper angle θ can be controlled bycontrolling the bias power density.

Alternatively, the flow rate ratio of CF₄ in the etching gas (mixturegas of CF₄ and Cl₂) may be adjusted. FIG. 20 is a graph showing thedependence of the taper angle θ on the flow rate ratio of CF₄. By makinglarger the flow rate ratio of CF₄, the selection ratio of tungsten tothe resist is made larger, and thus, the taper angle θ of the wiringscan be made larger.

Further, the taper angle θ is thought to depend on the selection ratioof tungsten to the resist. FIG. 21 is a graph showing the dependence ofthe taper angle θ on the selection ratio of tungsten to the resist.

In this way, by appropriately determining the bias power density or thereaction gas flow rate ratio using the ICP etching system, the gateelectrodes and wirings having the desired taper angle θ=3–40°(preferably 5–35°, and more preferably 7–20°) can be formed-very easily.

Though a tungsten film is described as an example, by using an ICPetching system with regard to known heat resisting conductive materials(Ta, Ti, Mo, Cr, Nb, Si, and the like), end portions of the pattern canbe easily processed to have a tapered shape.

Further, though mixture gas of CF₄ (carbon tetrafluoride) and Cl₂ isused as the etching gas used for the above-described dry etching, thepresent invention is not limited thereto, and, for example, mixture gasof a reactive gas containing fluorine and selected between C₂F₆ and C₄F₈and a gas containing chlorine and selected among Cl₂, SiCl₄, and BCl₃may also be used.

By carrying out the remaining processes according to Embodiment 1, asemiconductor device is completed.

It is to be noted that the structure of the present embodiment can befreely combined with any structure described in Embodiments 1–12.

By using the present invention, TFTs structured appropriately accordingto their respective performance required by the circuit or the elementcan be disposed on the same substrate, which can greatly improve theoperating performance and the reliability of the semiconductor device.

Further, in addition to the structures described in the above, in an LDDregion of an n-channel TFT used in the present invention, a regionhaving a concentration gradient exists where the concentration of ann-type impurity element becomes higher as the distance from an adjoiningdrain region decreases. Such a region having a concentration gradient isexpected to further enhance the effect of alleviating the electricfield.

This follows that improvement can be attained of the operatingperformance and the reliability of electric apparatus having such anelectro-optical device as a display medium.

1. A method of manufacturing a semiconductor device comprising: forminga crystalline semiconductor layer over an insulating substrate; forminga gate insulating film on the crystalline semiconductor layer; forming aconductive film on the gate insulating film; and etching the conductivefilm so as to form a gate electrode having a tapered cross section byusing an inductively coupled plasma chamber having multispiral coils. 2.A method of manufacturing a semiconductor device according to claim 1,wherein the gate electrode comprises at least one selected from thegroup consisting of tantalum, chromium, tungsten, and silicon havingconductivity.
 3. A method of manufacturing a semiconductor deviceaccording to claim 1, wherein a taper angle of the gate electrode isbetween 3 and 40°.
 4. A method of manufacturing a semiconductor deviceaccording to claim 1, wherein the step of etching the conductive film isconducted in a mixture gas containing fluorine and chlorine.
 5. A methodof manufacturing a semiconductor device according to claim 4, whereinthe gas containing fluorine is one selected from the group consisting ofCF₄, C₂F₆ and C₄F₈.
 6. A method of manufacturing a semiconductor deviceaccording to claim 4, wherein the gas containing chlorine is oneselected from the group consisting of Cl₂, SiCl₄, and BCl₃.
 7. A methodof manufacturing a semiconductor device according to claim 1, whereinthe semiconductor device is at least one of a liquid crystal displaydevice and an EL display device.
 8. A method of manufacturing asemiconductor device according to claim 1, wherein the semiconductordevice is at least one selected from the group consisting of a personalcomputer, a video camera, a goggle type display, an image reproductiondevice, and a projector.
 9. A method of manufacturing a semiconductordevice comprising: forming a crystalline semiconductor layer over aninsulating substrate; forming a gate insulating film on the crystallinesemiconductor layer; forming a conductive film on the gate insulatingfilm; and etching the conductive film so as to form a gate electrodehaving a tapered cross section by using an inductively coupled plasmachamber after determining a flow rate ratio of an etching gas.
 10. Amethod of manufacturing a semiconductor device according to claim 9,wherein the gate electrode comprises at least one selected from thegroup consisting of tantalum, chromium, tungsten, and silicon havingconductivity.
 11. A method of manufacturing a semiconductor deviceaccording to claim 9, wherein a taper angle of the gate electrode isbetween 3 and 40°.
 12. A method of manufacturing a semiconductor deviceaccording to claim 9, wherein the etching gas is a mixture gascontaining fluorine and chlorine.
 13. A method of manufacturing asemiconductor device according to claim 12, wherein the gas containingfluorine is one selected from the group consisting of CF₄, C₂F₆ andC₄F₈.
 14. A method of manufacturing a semiconductor device according toclaim 12, wherein the gas containing chlorine is one selected from thegroup consisting of Cl₂, SiCl₄, and BCl₃.
 15. A method of manufacturinga semiconductor device according to claim 9, wherein the semiconductordevice is at least one of a liquid crystal display device and an ELdisplay device.
 16. A method of manufacturing a semiconductor deviceaccording to claim 9, wherein the semiconductor device is at least oneselected from the group consisting of a personal computer, a videocamera, a goggle type display, an image reproduction device, and aprojector.
 17. A method of manufacturing a semiconductor devicecomprising: forming a crystalline semiconductor layer over an insulatingsubstrate; forming a gate insulating film on the crystallinesemiconductor layer; forming a conductive film on the gate insulatingfilm; and etching the conductive film so as to form a gate electrodehaving a tapered cross section by using an inductively coupled plasmachamber after determining a bias power density.
 18. A method ofmanufacturing a semiconductor device according to claim 17, wherein thegate electrode comprises at least one selected from the group consistingof tantalum, chromium, tungsten, and silicon having conductivity.
 19. Amethod of manufacturing a semiconductor device according to claim 17,wherein a taper angle of the gate electrode is between 3 and 40°.
 20. Amethod of manufacturing a semiconductor device according to claim 17,wherein the step of etching the conductive film is conducted in amixture gas containing fluorine and chlorine.
 21. A method ofmanufacturing a semiconductor device according to claim 20, wherein thegas containing fluorine is one selected from the group consisting ofCF₄, C₂F₆ and C₄F₈.
 22. A method of manufacturing a semiconductor deviceaccording to claim 20, wherein the gas containing chlorine is oneselected from the group consisting of Cl₂, SiCl₄, and BCl₃.
 23. A methodof manufacturing a semiconductor device according to claim 17, whereinthe semiconductor device is at least one of a liquid crystal displaydevice and an EL display device.
 24. A method of manufacturing asemiconductor device according to claim 17, wherein the semiconductordevice is at least one selected from the group consisting of a personalcomputer, a video camera, a goggle type display, an image reproductiondevice, and a projector.
 25. A method of manufacturing a semiconductordevice comprising: forming a crystalline semiconductor layer over aninsulating substrate; forming a gate insulating film on the crystallinesemiconductor layer; forming a conductive film on the gate insulatingfilm; and etching the conductive film so as to form a gate electrodehaving a tapered cross section by using an inductively coupled plasmachamber having multispiral coils after determining a flow rate ratio ofan etching gas.
 26. A method of manufacturing a semiconductor deviceaccording to claim 25, wherein the gate electrode comprises at least oneselected from the group consisting of tantalum, chromium, tungsten, andsilicon having conductivity.
 27. A method of manufacturing asemiconductor device according to claim 25, wherein a taper angle of thegate electrode is between 3 and 40°.
 28. A method of manufacturing asemiconductor device according to claim 25, wherein the etching gas is amixture gas containing fluorine and chlorine.
 29. A method ofmanufacturing a semiconductor device according to claim 28, wherein thegas containing fluorine is one selected from the group consisting ofCF₄, C₂F₆ and C₄F₈.
 30. A method of manufacturing a semiconductor deviceaccording to claim 28, wherein the gas containing chlorine is oneselected from the group consisting of Cl₂, SiCl₄, and BCl₃.
 31. A methodof manufacturing a semiconductor device according to claim 25, whereinthe semiconductor device is at least one of a liquid crystal displaydevice and an EL display device.
 32. A method of manufacturing asemiconductor device according to claim 25, wherein the semiconductordevice is at least one selected from the group consisting of a personalcomputer, a video camera, a goggle type display, an image reproductiondevice, and a projector.
 33. A method of manufacturing a semiconductordevice comprising: forming a crystalline semiconductor layer over aninsulating substrate; forming a gate insulating film on the crystallinesemiconductor layer; forming a conductive film on the gate insulatingfilm; and etching the conductive film so as to form a gate electrodehaving a tapered cross section by using an inductively coupled plasmachamber having multispiral coils after determining a bias power density.34. A method of manufacturing a semiconductor device according to claim33, wherein the gate electrode comprises at least one selected from thegroup consisting of tantalum, chromium, tungsten, and silicon havingconductivity.
 35. A method of manufacturing a semiconductor deviceaccording to claim 33, wherein a taper angle of the gate electrode isbetween 3 and 40°.
 36. A method of manufacturing a semiconductor deviceaccording to claim 33, wherein the step of etching the conductive filmis conducted in a mixture gas containing fluorine and chlorine.
 37. Amethod of manufacturing a semiconductor device according to claim 36,wherein the gas containing fluorine is one selected from the groupconsisting of CF₄, C₂F₆ and C₄F₈.
 38. A method of manufacturing asemiconductor device according to claim 36, wherein the gas containingchlorine is one selected from the group consisting of Cl₂, SiCl₄, andBCl₃.
 39. A method of manufacturing a semiconductor device according toclaim 33, wherein the semiconductor device is at least one of a liquidcrystal display device and an EL display device.
 40. A method ofmanufacturing a semiconductor device according to claim 33, wherein thesemiconductor device is at least one selected from the group consistingof a personal computer, a video camera, a goggle type display, an imagereproduction device, and a projector.
 41. A method of manufacturing asemiconductor device according to claim 1, wherein the gate electrodehas a top surface, a side surface, and a bottom surface which is incontact with the gate insulating film, and wherein the bottom surface islarger than the top surface.
 42. A method of manufacturing asemiconductor device according to claim 9, wherein the gate electrodehas a top surface, a side surface, and a bottom surface which is incontact with the gate insulating film, and wherein the bottom surface islarger than the top surface.
 43. A method of manufacturing asemiconductor device according to claim 17, wherein the gate electrodehas a top surface, a side surface, and a bottom surface which is incontact with the gate insulating film, and wherein the bottom surface islarger than the top surface.
 44. A method of manufacturing asemiconductor device according to claim 25, wherein the gate electrodehas a top surface, a side surface, and a bottom surface which is incontact with the gate insulating film, and wherein the bottom surface islarger than the top surface.
 45. A method of manufacturing asemiconductor device according to claim 33, wherein the gate electrodehas a top surface, a side surface, and a bottom surface which is incontact with the gate insulating film, and wherein the bottom surface islarger than the top surface.
 46. A method of manufacturing asemiconductor device comprising: forming a crystalline semiconductorlayer over an insulating substrate; forming a gate insulating film onthe crystalline semiconductor layer; forming a conductive film on thegate insulating film; and etching the conductive film so as to form agate electrode having a tapered cross section by using an inductivelycoupled plasma chamber.
 47. A method of manufacturing a semiconductordevice according to claim 46, wherein the gate electrode has a topsurface, a side surface, and a bottom surface which is in contact withthe gate insulating film, and wherein the bottom surface is larger thanthe top surface.
 48. A method of manufacturing a semiconductor deviceaccording to claim 46, wherein the gate electrode comprises at least oneselected from the group consisting of tantalum, chromium, tungsten, andsilicon having conductivity.
 49. A method of manufacturing asemiconductor device according to claim 46, wherein a taper angle of thegate electrode is between 3 and 40°.
 50. A method of manufacturing asemiconductor device according to claim 46, wherein the step of etchingthe conductive film is conducted in a mixture gas containing fluorineand chlorine.
 51. A method of manufacturing a semiconductor deviceaccording to claim 50, wherein the gas containing fluorine is oneselected from the group consisting of CF₄, C₂F₆ and C₄F₈.
 52. A methodof manufacturing a semiconductor device according to claim 50, whereinthe gas containing chlorine is one selected from the group consisting ofCl₂, SiCl₄, and BCl₃.
 53. A method of manufacturing a semiconductordevice according to claim 46, wherein the semiconductor device is atleast one of a liquid crystal display device and an EL display device.54. A method of manufacturing a semiconductor device according to claim46, wherein the semiconductor device is at least one selected from thegroup consisting of a personal computer, a video camera, a goggle typedisplay, an image reproduction device, and a projector.